| Autor: |
J.P. Pieters, A.G.K. Lutsch, H. F. le Roux |
| Rok vydání: |
1983 |
| Předmět: |
|
| Zdroj: |
Microelectronics Journal. 14:27-35 |
| ISSN: |
0026-2692 |
| DOI: |
10.1016/s0026-2692(83)80220-1 |
| Popis: |
A technique is described of the modification of a standard bipolar process by the addition of a single ion implantation step with one extra photo mask to give a relatively high speed-power product and a high yield of analog compatible I 2 L circuits. The method is flexible in that the I 2 L device characteristics are determined mainly by the ion implantation parameters, and the rest of the bipolar process can be tailored for analog device requirements. Experimental results are presented which show an I 2 L β up of 6 per collector for the npn transistors and a speed-power product of 0.5 pJ for a fan-out of 4. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
