Valence-band maximum in the layered semiconductor WSe2: Application of constant-energy contour mapping by photoemission
| Autor: | Peter Blaha, P. Steiner, Ralph Claessen, M. Hengsberger, Th. Straub, Kai Fauth, Stefan Hüfner, Th. Finteis |
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| Rok vydání: | 1996 |
| Předmět: |
Physics
Condensed matter physics business.industry Photoemission spectroscopy Inverse photoemission spectroscopy Center (category theory) Angle-resolved photoemission spectroscopy Brillouin zone Condensed Matter::Materials Science Optics Semiconductor Condensed Matter::Strongly Correlated Electrons Electronic band structure business Energy (signal processing) |
| Zdroj: | Physical Review B. 53:R16152-R16155 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.53.r16152 |
| Popis: | Angular-resolved photoemission data and a full-potential fully relativistic density-functional calculation on the electronic band structure of the layered semiconductor W${\mathrm{Se}}_{2}$ consistently show that the valence-band maximum is located at the sixfold-degenerate $K$ point of the Brillouin zone and not at its center, as earlier calculations have predicted. By mapping out constant energy contours with photoemission spectroscopy, the k space location of the valence-band maximum can be visualized in a very instructive way, demonstrating the potential of this spectroscopic technique also for semiconductors. |
| Databáze: | OpenAIRE |
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