Nanocatalyst-induced hydroxyl radical (·OH) slurry for tungsten CMP for next-generation semiconductor processing

Autor: Heon-Yul Ryu, Yeon-Ah Jeong, Jae-Gon Choi, Nagendra Prasad Yerriboina, Jong-Dai Park, Seong-Jun Han, Chang-Yong Park, Tae-Gon Kim, Jung-Hwan Lee, Maneesh Kumar Poddar, Jae-Hyun Kim, Lee Min-Gun, Jin-Goo Park
Rok vydání: 2019
Předmět:
Zdroj: Journal of Materials Science. 55:3450-3461
ISSN: 1573-4803
0022-2461
DOI: 10.1007/s10853-019-04239-4
Popis: Chemical mechanical polishing (CMP) is one of the important steps that involves during fabrication of semiconductor devices. This research highlights the importance of tungsten (W) polishing slurries consisting of a novel nonionic, heat-activated FeSi nanocatalyst on the performance of W chemical mechanical polishing. The results obtained from the polishing data showed a higher W removal rate of 5910 A/min with a slurry consisting of FeSi nanocatalyst at a polishing temperature of 80 °C. The increase in W polishing rate using FeSi slurry was explained on the basis of formation of a thicker oxide layer (WO3) due to the interaction between the W surface and hydroxyl radicals (·OH) generated via the reaction between FeSi and hydrogen peroxide at 80 °C. Higher ·OH generation and increase in oxygen depth profile of W film were confirmed by UV–Vis spectrometer and AES analysis, respectively. Compared to Fe(NO3)3 catalyst, the slurry with FeSi showed a higher static etch rate at 80 °C. Potentiodynamic polarization results obtained using FeSi slurry showed thicker WO3 passivation layer as compared to the slurry with Fe(NO3)3. The increase in the polishing rate of W CMP using slurry with FeSi nanocatalyst can be essentially attributed to the generation of much stronger oxidant ·OH due to its increased catalytic effect at a high polishing temperature of 80 °C.
Databáze: OpenAIRE
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