Improving the electrical characteristics of nanoscale triple-gate junctionless FinFET using gate oxide engineering
| Autor: | Mohammad K. Anvarifard, Nazanin Baghban Bousari, Saeed Haji-Nasiri |
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| Rok vydání: | 2019 |
| Předmět: |
Permittivity
Materials science Silicon business.industry Oxide chemistry.chemical_element 020206 networking & telecommunications Drain-induced barrier lowering 02 engineering and technology Dielectric Ion 03 medical and health sciences chemistry.chemical_compound 0302 clinical medicine Lattice constant chemistry Gate oxide 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business 030217 neurology & neurosurgery |
| Zdroj: | AEU - International Journal of Electronics and Communications. 108:226-234 |
| ISSN: | 1434-8411 |
| Popis: | This paper is about the compared performance investigation of various structures of Hetero-Dielectric (HD) triple-gate FinFETs with different gate oxides in terms of Double Hetero Gate Oxide (DHGO), Triple Hetero Gate Oxide (THGO) and Quadruple Hetero Gate Oxide (QHGO) to produce lower leakage current, higher Ion/Ioff ratio, higher gm/gd and also lower Drain Induced Barrier Lowering (DIBL) than those of a conventional triple-gate FinFET. Among all of them, the best results are explored for the DHGO FinFET structure. In DHGO FinFET structure, a high-κ dielectric (κ = 22) is used on the top oxide to increase the gate control and a low-k dielectric (κ = 3.9) is used over silicon body owing to the compatibility of lattice constant of SiO2 and silicon. Mode-space drift-diffusion (DD_MS) model coupled with Schrodinger equation has been utilized in order to analyze the proposed and conventional structures in three dimensional (3D) simulation domain. Interestingly, by decreasing the thickness of the oxide layer and increasing the permittivity coefficient, the leakage current decreases, thus increasing the Ion/Ioff ratio. The DHGO FinFET structure is found to exhibit higher Ion/Ioff, lower DIBL and higher gm/gd ratio, thus proving performance superiority over the other conventional junctionless FinFET and also MOSFETs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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