Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs
| Autor: | Andrew A. Woodworth, Collin Hitchcock, T. Paul Chow, Joseph A. McPherson, Wei Ji |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering Linear energy transfer 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Ion Impact ionization Mechanics of Materials Electric field 0103 physical sciences MOSFET Optoelectronics General Materials Science Power MOSFET 0210 nano-technology business Voltage |
| Zdroj: | Materials Science Forum. 1004:889-896 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.1004.889 |
| Popis: | This paper describes the mechanisms behind the failure of silicon carbide (SiC) Power MOSFETs (metal oxide semiconductor field effect transistors) when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET under the strike of a silver ion with a Linear Energy Transfer (LET) of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. The failure occurs near the interface between the epitaxial layer and the substrate layer due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. Two improved designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device’s tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the specific on-resistance (Ron,sp) by only 5%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|