Nitridation of Si(100) surface with NH3
| Autor: | S. Ishidzuka, Isao Kusunoki, Tsuyoshi Takaoka, Y. Igari |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Silicon
Scanning electron microscope Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Island growth Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Silicon nitride Nitriding Beam (structure) |
| Zdroj: | Applied Surface Science. :107-111 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(98)00034-8 |
| Popis: | The nitridation of a Si(100) surface with a NH3 beam at temperatures between 600 and 900°C was studied using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Thicker film was formed at higher temperature. The composition ratio of the film was almost constant during the film growth at all temperature. Island growth of silicon nitride was observed at 900°C using SEM. The N1s XPS spectrum of the Si surface nitrided was deconvoluted into two Gaussian components. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect