Raman study of annealed two-dimensional heterostructure of graphene on hexagonal boron nitride
| Autor: | A. Meftah, H. Ajlani, Meherzi Oueslati, A. Cavanna, Mourad Souibgui, Ali Madouri |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Annealing (metallurgy) 02 engineering and technology Chemical vapor deposition 01 natural sciences law.invention symbols.namesake Optics law 0103 physical sciences General Materials Science Electrical and Electronic Engineering 010306 general physics Graphene oxide paper Condensed matter physics business.industry Graphene Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics symbols 0210 nano-technology Raman spectroscopy business Bilayer graphene Graphene nanoribbons |
| Zdroj: | Superlattices and Microstructures. 112:394-403 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2017.09.047 |
| Popis: | In this paper, we investigate stacked 2D graphene layers on hexagonal boron nitride (h-BN). The graphene is obtained by high-quality chemical vapor deposition (CVD) and transferred to the h-BN substrate. We focus our attention on annealing effect at 1040 °C on single graphene layer (SGL) and bilayer graphene (BLG) on h-BN substrate using Raman spectroscopy. Our results show, before annealing, a twist angle θ = 0.63 ° between the SGL and the h-BN substrate and a twist angle 3 ° θ G 1 G 2 8 ° between the two graphene layers of the BLG. After annealing, the analysis of the graphene G and 2D bands show a rotational reorientation of the graphene layer with respect to the h-BN substrate. Raman mapping also shows that the rotational reorientation is spatially dependent. |
| Databáze: | OpenAIRE |
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