A Review Article on Carbon Nanotube Field Effect Transistors Technology
| Autor: | Prashant Dwivedi, Nidhi Dhurandhar |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Electron mobility
Materials science Geography Planning and Development Transistor Contact resistance Hardware_PERFORMANCEANDRELIABILITY Dissipation Engineering physics law.invention Carbon nanotube field-effect transistor Noise margin law MOSFET Hardware_INTEGRATEDCIRCUITS General Earth and Planetary Sciences Field-effect transistor Hardware_LOGICDESIGN Water Science and Technology |
| Zdroj: | CSVTU Research Journal on Engineering and Technology. 8:56-62 |
| ISSN: | 0974-8725 |
| DOI: | 10.30732/rjet.20190801007 |
| Popis: | Silicon industry is evolving and scaling down day by day. With the minimized size of the transistor, the craving for high performance devices also takes place. For MOSFET, size is limited and below some dimensions the device will undergo leakage current, parasitic capacitances, power dissipation issues. Hence, researchers has implemented a novel device named, CNTFET (Carbon NanoTube Field Effect Transistor). CNTFET provides high carrier mobility, reduction in delay and power consumption, better noise margin, suitable contact resistance and fast switching speed. In this review paper, different structures, CNTFET classifications, chiral vector and chirality has been discussed. |
| Databáze: | OpenAIRE |
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