| Autor: |
W. Tompkins, Edwin X. Li, Norman R. Scheinberg, D. Stofman |
| Rok vydání: |
1995 |
| Předmět: |
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| Zdroj: |
IEEE Journal of Solid-State Circuits. 30:872-880 |
| ISSN: |
0018-9200 |
| DOI: |
10.1109/4.400429 |
| Popis: |
A GaAs MESFET model is presented that addresses the modeling problem arising from the discrepancy between the derivatives of the dc current and the measured small signal parameters of a GaAs MESFET. This discrepancy traditionally required the user of a non-linear circuit analysis program such as SPICE to trade off the accuracy between the dc analysis and ac analysis. This paper addresses this problem and leads to a solution that completely eliminates the need for such a trade off. Two additional nodes are incorporated into the SPICE MESFET model by providing two extra conducting paths necessary to reconcile the aforementioned discrepancies and to keep the equations self-consistent. In addition, the model allows the user to select different sets of model parameters to independently match I/sub ds/, g/sub m/, and g/sub ds/, An integration scheme to transform the new model back to a 3/spl times/3 Y-matrix is employed to accelerate the simulation speed. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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