THE ADVANTAGE OF LOW GROWTH TEMPERATURE AND V/III RATIO FOR InxGa1-xAs NANOWIRES GROWTH
| Autor: | Samsudi Sakrani, Edy Wibowo, Imam Sumpono, Zulkafli Othaman |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
X-ray absorption spectroscopy
Materials science Analytical chemistry Nanowire Substrate (electronics) Condensed Matter Physics law.invention Crystallography law Transmission electron microscopy General Materials Science Metalorganic vapour phase epitaxy Electron microscope Spectroscopy Chemical composition |
| Zdroj: | Nano. :159-165 |
| ISSN: | 1793-7094 1793-2920 |
| DOI: | 10.1142/s1793292011002457 |
| Popis: | Cylindrical In x Ga 1-x As nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of In x Ga 1-x As NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition. |
| Databáze: | OpenAIRE |
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