Investigating transverse Hall voltages using two-terminal setups
| Autor: | Leandro R. F. Lima, Alexis R. Hernández |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Physics
Graphene Scattering Non-equilibrium thermodynamics 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences law.invention Nonlinear system Transverse plane symbols.namesake Quantum spin Hall effect law Hall effect Quantum mechanics 0103 physical sciences symbols 010306 general physics 0210 nano-technology Hamiltonian (quantum mechanics) |
| Zdroj: | Physical Review B. 98 |
| ISSN: | 2469-9969 2469-9950 |
| Popis: | In this paper, we present a method to numerically study transverse Hall voltages using an alternative quantity in two-terminal setups. Using nonlinear transport concepts, we find that the Hall voltage dependence on the model parameters can be investigated from the difference between the injectivities of each terminal. The method is suitable to work with nonequilibrium Green's functions as well as for scattering matrix approaches. We illustrate the proposed idea by studying the quantum spin Hall effect in graphene with disordered spin-orbit scattering centers induced by adatoms. We use two distinct models: a finite-difference implementation of the Dirac Hamiltonian and a tight-binding Hamiltonian combined with the scattering matrix approach and the nonequilibrium Green's functions approach, respectively. |
| Databáze: | OpenAIRE |
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