The fabrication and assessment of high speed MOCVD GaAlAs pin detectors

Autor: G. Ball, D.J. Esdale, D.R. Wight, P.E. Oliver
Rok vydání: 1984
Předmět:
Zdroj: Journal of Crystal Growth. 68:461-465
ISSN: 0022-0248
DOI: 10.1016/0022-0248(84)90450-0
Popis: High speed MOCVD grown PIN photodiodes are described. Growth, fabrication, packaging and testing details are presented. It is shown that the frequency response of large area devices is accurately described by a simple RC model. Smaller geometry devices display 3 dB frequencies up to 7.0 GHz with responsivities of 0.24 A/W at 850 nm. The frequency response of these devices ceases to be determined by device capacitance and is controlled by more complex parasitic package and mounting elements.
Databáze: OpenAIRE