Corrections to 'A Novel Dual-Directional SCR Structure With High Holding Voltage for 12-V Applications in 0.13-μm BCD Process' [Nov 20 5020-5027]

Autor:	Yong-Seo Koo, Kyoung-Il Do, Bo-Bae Song
Rok vydání:	2021
Předmět:	Physics business.industry Process (computing) Structure (category theory) Line (electrical engineering) Avalanche breakdown Electronic Optical and Magnetic Materials Dual (category theory) Snapback Optoelectronics Breakdown voltage Electrical and Electronic Engineering business Voltage
Zdroj:	IEEE Transactions on Electron Devices. 68:4805-4805
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2021.3073182
Popis:	In Section I of the above article [1] , the sentence beginning in the 18th line of the second column contains typos that misrepresent the range of voltages. The correct sentence is the following: “However, the strong snapback characteristics of a traditional SCR structure that are caused by high avalanche breakdown between the well regions allow it to have a substantially high trigger voltage (approximately 17–22 V) and low holding voltage (approximately 2–4 V).”
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1ee5d27c64dd02c3c7caa3b8837d1398 https://doi.org/10.1109/ted.2021.3073182 Zobrazit plný text záznamu