Characterization and Failure Analysis of 650-V Enhancement-Mode GaN HEMT for Cryogenically Cooled Power Electronics
| Autor: | Fei Wang, Ruirui Chen, Jiahao Niu, Leon M. Tolbert, Handong Gui, Ren Ren, Benjamin B. Choi, Daniel Costinett, Zheyu Zhang, Benjamin J. Blalock |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Physics::Instrumentation and Detectors Transconductance Energy Engineering and Power Technology Gallium nitride 02 engineering and technology Cryogenics High-electron-mobility transistor 01 natural sciences law.invention Switching time Condensed Matter::Materials Science chemistry.chemical_compound law Power electronics 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering 010302 applied physics business.industry 020208 electrical & electronic engineering Transistor Astrophysics::Instrumentation and Methods for Astrophysics Semiconductor chemistry Optoelectronics business |
| Zdroj: | IEEE Journal of Emerging and Selected Topics in Power Electronics. 8:66-76 |
| ISSN: | 2168-6785 2168-6777 |
| DOI: | 10.1109/jestpe.2019.2949953 |
| Popis: | In order to evaluate the feasibility of newly developed gallium nitride (GaN) devices in a cryogenically cooled converter, this article characterizes a 650-V enhancement-mode GaN high-electron mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di / dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the ON-resistance of the channel at the cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. The ultrafast switching speed-induced high di / dt and dv / dt at cryogenic temperatures amplify the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultrafast switching speed are given in this article. |
| Databáze: | OpenAIRE |
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