AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
| Autor: | Shuichi Noda, Po-Chun Chang, Shih-Chien Liu, Heng-Tung Hsu, Hsiao-Chieh Lo, Edward Yi Chang, Yuen Yee Wong, Yen-Ku Lin, Seiji Samukawa, Chia-Hsun Wu, Quang Ho Luc |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Wide-bandgap semiconductor Gallium nitride 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology Noise figure 01 natural sciences Noise (electronics) Cutoff frequency Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Etching (microfabrication) 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Reactive-ion etching 0210 nano-technology business |
| Zdroj: | IEEE Electron Device Letters. 37:1395-1398 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density ( ${I}_{\mathrm {DS,max}}$ ) of 1.54 A/mm, low $1/f$ noise, a current-gain cutoff frequency ( ${f}_{\mathrm {T}}$ ) of 153 GHz, a maximum frequency of oscillation ( ${f}_{\mathrm {{MAX}}}$ ) of 167 GHz, and a minimum noise figure (NF $_{\mathrm {{min}}}$ ) of 3.28 dB with an associated gain ( ${G}_{\mathrm {{AS}}}$ ) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications. |
| Databáze: | OpenAIRE |
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