Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.3O on Si(001) as alternative gate dielectrics
| Autor: | K. R. Hofmann, Herbert Pfnür, A. Cosceev, D. Müller-Sajak |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Metals and Alloys Analytical chemistry Oxide Surfaces and Interfaces Dielectric Capacitance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Characterization (materials science) Amorphous solid chemistry.chemical_compound chemistry Alkaline earth oxides Materials Chemistry Conduction band |
| Zdroj: | Thin Solid Films. 518:S281-S284 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2009.10.108 |
| Popis: | We present first investigations of the electrical characteristics of high- k amorphous BaO, SrO and crystalline Ba 0.7 Sr 0.3 O films on n-Si(001). The MOS structures were grown in a UHV chamber on structured SiO 2 samples with Si(001) windows and were capped with Au layers afterwards for ex-situ electrical characterization. The smallest capacitance equivalent oxide thicknesses (relative to SiO 2 ) achieved so far in BaO, SrO and Ba 0.7 Sr 0.3 O MOS-diodes were 1.0, 3.5 and 1.6 nm at oxide thicknesses of 5, 10 and 10 nm, respectively. The corresponding leakage current densities at + 1 V accumulation bias were 2.1, 1.3 · 10 − 5 and 4.7 · 10 − 6 A/cm 2 . The lowest interface trap densities observed at ∼ 0.2 eV below the conduction band in MOS-diodes with BaO, SrO and Ba 0.7 Sr 0.3 O films were 5.2 · 10 12 , 9.7 · 10 11 and 9.1 · 10 10 eV − 1 cm − 2 , respectively. These results suggest that alkaline-earth oxides might be interesting materials for application as high- k gate dielectrics. |
| Databáze: | OpenAIRE |
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