Ultrafast Recombination in Ion—Damaged InP Studied by Femtosecond Luminescence

Autor:	K.F. Lamprecht, R.A. Höpfel, L. Palmetshofer
Rok vydání:	1990
Zdroj:	Ultrafast Phenomena.
Popis:	Ion-damaged III-V semiconductors with ultrashort carrier lifetimes are important materials for applications in ultrafast optoelectronics1. Recently, in addition to photoconductivity and far infrared techniques, optical methods such as time-resolved reflectivity2 and subpicosecond luminescence3,4 have been applied to study the recombination dynamics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1d6eca29729b72bc7641e684f3eafc65 https://doi.org/10.1364/up.1990.thc6 Zobrazit plný text záznamu