Solution of a New Molecular Structure{[SnClGe(SiC3H9)3]4}by Simulated Annealing
Autor: | R. A. Geanangel, Y.-S. Chen, S. P. Mallela, W.-P. Su |
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Rok vydání: | 1997 |
Předmět: | |
Zdroj: | Acta Crystallographica Section A Foundations of Crystallography. 53:396-399 |
ISSN: | 0108-7673 |
DOI: | 10.1107/s0108767397002766 |
Popis: | A crystal is known to possibly contain Sn, Ge, Si, C, Cl and H but the precise stoichiometry is unknown. In addition, the crystal seems to be highly disordered. The X-ray data did not yield to conventional direct methods. The structure has been solved by employing simulated annealing. The methodology involved is presented. |
Databáze: | OpenAIRE |
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