Solution of a New Molecular Structure{[SnClGe(SiC3H9)3]4}by Simulated Annealing

Autor: R. A. Geanangel, Y.-S. Chen, S. P. Mallela, W.-P. Su
Rok vydání: 1997
Předmět:
Zdroj: Acta Crystallographica Section A Foundations of Crystallography. 53:396-399
ISSN: 0108-7673
DOI: 10.1107/s0108767397002766
Popis: A crystal is known to possibly contain Sn, Ge, Si, C, Cl and H but the precise stoichiometry is unknown. In addition, the crystal seems to be highly disordered. The X-ray data did not yield to conventional direct methods. The structure has been solved by employing simulated annealing. The methodology involved is presented.
Databáze: OpenAIRE