Physical Analysis on the DC and RF Operations of a Novel SOI-MESFET with Protruded Gate and Dual Wells
| Autor: | Zeinab Ramezani, Mohaddeseh Mohtaram, Danial Keighobadi, Ali A. Orouji |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Power gain Materials science Silicon business.industry chemistry.chemical_element Silicon on insulator 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Power (physics) Impact ionization chemistry Electric field 0103 physical sciences Optoelectronics MESFET 0210 nano-technology business Floating body effect |
| Zdroj: | Silicon. 14:3911-3917 |
| ISSN: | 1876-9918 1876-990X |
| Popis: | In this article, a novel SOI MESFET which can be suitable for high power applications is proposed. In order to upgrade its electrical characteristics, a protruded gate and dual wells (PGDW) n-type silicon in the buried oxide are formed. This strategy by using a protruded gate and a right well at the drain side increases the channel thickness causing a rise in the drain current. Besides, a reduction in the electric field maximum value near the drain side leads to improving the maximum power density of the PGDW- structure 143% over a Conventional MESFET. A left well in the proposed structure has been used to absorb the created holes due to the impact ionization mechanism and causes improvement of floating body effect. Also, the PGDW-MESFET demonstrates the improved performance in the RF characteristics, consequently, two parameters h21, Unilateral power gain boost almost 14%, and 11%, respectively compared to the C-MESFET. |
| Databáze: | OpenAIRE |
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