Silicon carbide MESFETs performances and application in broadcast power amplifiers

Autor:	B. Darges, Farid Temcamani, Olivier Noblanc, C. Brylinski, P. Bannelier, J. P. Prigent, P. Pouvil
Rok vydání:	2002
Předmět:	LDMOS Materials science business.industry Amplifier RF power amplifier Electrical engineering Wide-bandgap semiconductor Transistor array chemistry.chemical_compound chemistry Silicon carbide Digital television business Microwave
Zdroj:	2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).
DOI:	10.1109/mwsym.2001.966976
Popis:	We present DC, small signal and power characterization of recent Thomson silicon carbide MESFETs. We present also performances of SiC power amplifiers designed for use in broadcast digital television. A comparison with a LDMOS amplifier showed that SiC is a very promising material for microwave and RF power amplification.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1d0912c123c4a078167420c35fd0f984 https://doi.org/10.1109/mwsym.2001.966976 Zobrazit plný text záznamu