High-rate Deposition of Polycrystalline Diamond Film Using Time-series Exposure of Modulated/Non-modulated Induction Thermal Plasmas at Different Flow Rates of Carbon Source Gas
| Autor: | Tatsuo Ishijima, Yasunori Tanaka, Yusuke Nakano, N. Kano, Kazufumi Hata, Yoshihiko Uesugi |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
chemistry.chemical_classification Materials science General Chemical Engineering Analytical chemistry Nucleation Diamond General Chemistry Substrate (electronics) Plasma engineering.material Condensed Matter Physics 01 natural sciences 010305 fluids & plasmas Surfaces Coatings and Films Volumetric flow rate Hydrocarbon chemistry 0103 physical sciences Thermal engineering Deposition (phase transition) |
| Zdroj: | Plasma Chemistry and Plasma Processing. 41:757-777 |
| ISSN: | 1572-8986 0272-4324 |
| DOI: | 10.1007/s11090-021-10156-9 |
| Popis: | In this paper $$\hbox {CH}_4$$ / $$\hbox {H}_2$$ gas flow rate effect on polycrystalline diamond deposition was studied using a time-series exposure technique of modulated induction thermal plasma (M-ITP) and non-modulated induction thermal plasma (NM-ITP). The M-ITP was used to make nucleation of diamond particles in the first stage, and then non-modulated ITP was used to grow diamond particles in the next stage. The diamond films fabricated after exposure by M-ITP and then by NM-ITP were studied in terms of morphology and constituents. Experimental results showed that higher $$\hbox {CH}_4$$ / $$\hbox {H}_2$$ gas flow rate condition to 0.1/10 slpm provided a higher deposition rate of polycrystalline diamond film. This result implied that higher $$\hbox {CH}_4$$ / $$\hbox {H}_2$$ gas flow rate would give a higher neutral hydrocarbon fluxes onto the substrate, which was also supported from the numerical simulation model. |
| Databáze: | OpenAIRE |
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