Defect Properties of CuInS2 Single Crystals Grown by Horizontal Bridgman Method with Controlling S Vapor Pressure

Autor:	Hiroaki Matsushita, Tomohiro Mihira, Takeo Takizawa
Rok vydání:	2001
Předmět:	Crystallography Materials science Photoluminescence Impurity Hall effect Vapor pressure Photoconductivity General Engineering Analytical chemistry General Physics and Astronomy Activation energy Thermal conduction Absorption (electromagnetic radiation)
Zdroj:	Japanese Journal of Applied Physics. 40:4789
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.40.4789
Popis:	We have analyzed the lattice defects of CuInS2 bulk single crystals prepared by the horizontal Bridgman method with controlling S vapor pressure. The grown crystals have p-type conduction and electrical resistivities of more than 103 Ω·cm at room temperature. From measurements of the Hall effect, photoluminescence, optical absorption and photoconductivity, the activation energies of acceptors in CuInS2 crystals are shown to be of 85 meV, 115 meV and 360 meV, which are respectively ascribed to Cu-vacancies, In-vacancies and extrinsic impurities; whereas donors of 35 meV activation energy are ascribed to S-vacancies.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1bda34643ed757fa8a2e8b770898c846 https://doi.org/10.1143/jjap.40.4789 Zobrazit plný text záznamu