Investigation and characterization of silicon concentration in N-free anti-reflective layer films
| Autor: | Jiepeng Zhou, Haixia Li, Yiqi Gong, Jingxun Fang, Chunwen Liu, Yu Bao, Luhang Shen |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon Analytical chemistry chemistry.chemical_element 02 engineering and technology Molar absorptivity 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Nickel chemistry Impurity Transmission electron microscopy 0210 nano-technology Silicon oxide Layer (electronics) Refractive index |
| Zdroj: | 2020 China Semiconductor Technology International Conference (CSTIC). |
| Popis: | In the 28 nm high voltage flow, the N-free anti-reflective layer (NFARL) taking the place of silicon oxide as Poly hard mask (HM) film can achieve more vertical profile for Poly. However, there is (Ni, Pt)Si impurity generated on the top of the NFARL film after nickel silicide process. In this paper, the effects of silicon (Si) concentration on the characteristic, Poly profile and purity of NFARL films were systematically investigated by experimental techniques. With increasing of Si concentration, the refractive index $n$ and extinction coefficient $k$ of films increase monotonically. The transmission electron microscopy (TEM) measurements indicate (Ni, Pt)Si impurity can't be formed on the top of the NFARL film for the lowest Si concentration, because there is no C-Si bond in the film. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|