Formation of TiN/Ti adhesion layers by collimated sputtering
| Autor: | Hideo Kotani, Masahiko Fujisawa, Akihiko Ohsaki |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
Computer Networks and Communications business.industry Contact resistance General Physics and Astronomy chemistry.chemical_element Adhesion Chemical vapor deposition Aspect ratio (image) Tungsten film Optics chemistry Sputtering Electrical and Electronic Engineering Composite material Tin business Layer (electronics) |
| Zdroj: | Electronics and Communications in Japan (Part II: Electronics). 78:59-66 |
| ISSN: | 1520-6432 8756-663X |
| Popis: | Formation of a TiN/Ti adhesion layer by collimated sputtering for a structured surface with a high aspect ratio was investigated. The bottom coverage was simulated and the simulated and experimental results were compared. As a result, it was found that the simulated and experimental results were in agreement if the scattering of sputtered particles by gas was small. Three-dimensional simulation of wall coverage predicted a formation of constriction at the top of the contact hole and the formation of constriction was confirmed experimentally. The formation of constriction caused the peeling of an adhesion layer when a chemical vapor deposition (CVD) tungsten film was deposited. To avoid the formation of constriction, a tapered contact hole was used. It was found also that the contact resistance and junction leakage characteristics were improved by collimation sputtering when an adhesion layer was deposited in the contact holes with a high aspect ratio. It was concluded that this technology is advantageous in contact formation in devices with submicron structures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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