Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs

Autor:	Limeng Shi, Tianshi Liu, Shengnan Zhu, Jiashu Qian, Michael Jin, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal
Rok vydání:	2022
Zdroj:	2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1b0dd612d92183afb078c5afa2c7b1f3 https://doi.org/10.1109/wipda56483.2022.9955295 Zobrazit plný text záznamu