SiGe/SiGeO2 interface defects
| Autor: | S. Lebib, H. J. von Bardeleben, M. Schoisswohl, J. L. Cantin |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Silicon Metals and Alloys Dangling bond Analytical chemistry Oxide chemistry.chemical_element Germanium Surfaces and Interfaces Epitaxy Concentration ratio Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Nuclear magnetic resonance chemistry law Materials Chemistry Spin (physics) Electron paramagnetic resonance |
| Zdroj: | Thin Solid Films. 294:242-245 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(96)09244-9 |
| Popis: | Si 0.8 Ge 0.2 /Si 0.8 Ge 0.2 O 2 interface defects were studied by the electron paramagnetic resonance (EPR) technique in 1 μm thick epitaxial porous SiGe layers. Two different intrinsic interface defects, the silicon and germanium P b centers, have been identified. These defects are respectively Si and Ge dangling bond centers with trigonal point symmetry. The EPR parameters such as g -values, linewidths and spin concentrations have been determined for different oxidation conditions: native oxide formation at room temperature and 300 °C low-pressure oxidation. The spin concentrations of the two defects strongly depend on the oxidation conditions. The spin concentration ratio differs from the [Si]/[Ge] atomic concentration ratio of the porous layer. |
| Databáze: | OpenAIRE |
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