Investigation of MOCVD grown crack-free 4 μm thick aluminum nitride using nitrogen as a carrier gas
| Autor: | Asif Khan, Dhruvinkumar Patel, Kamal Hussain, Abdullah Mamun, Samiul Hasan, Mikhail Gaevski, Iftikhar Ahmad |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Mechanical Engineering chemistry.chemical_element 02 engineering and technology Substrate (electronics) Chemical vapor deposition Nitride 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences symbols.namesake chemistry Mechanics of Materials Aluminium symbols General Materials Science Metalorganic vapour phase epitaxy Composite material Dislocation 0210 nano-technology Raman spectroscopy Layer (electronics) |
| Zdroj: | MRS Advances. 6:456-460 |
| ISSN: | 2059-8521 |
| DOI: | 10.1557/s43580-021-00071-8 |
| Popis: | We report the growth of crack-free 4 μm thick Aluminum Nitride (AlN) layers in a custom build vertical cold wall metal–organic chemical vapor deposition (MOCVD) reactor using N2 carrier gas on 0.2° offcut sapphire substrate without any additional substrate preprocessing steps. The growth process includes a low-temperature pulsed rough buffer layer followed by a high-temperature layer with continuous growth without any interlayer. The structural properties of the AlN were analyzed using atomic force microscopy (AFM), X-ray diffraction (XRD), and Raman spectroscopy. The AFM image of the 4 µm AlN layer shows an atomically smooth 2-dimensional surface with terrace-like steps. The dislocation density of 1 × 109 cm−2 was calculated using Williamson and Hall process for a 4 µm AlN sample. Additionally, strain calculation from XRD and stress calculation from Raman spectroscopy of AlN grown with N2 carrier gas are discussed. |
| Databáze: | OpenAIRE |
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