Effects of GaSb surface preparation on the characteristics of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition
| Autor: | Chao Min Chang, Jen-Inn Chyi, Cheng Yu Chen, Wei Jen Hsueh, Mao Lin Huang |
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| Rok vydání: | 2017 |
| Předmět: |
Chemical substance
Nanotechnology 02 engineering and technology Dielectric 01 natural sciences law.invention Metal Atomic layer deposition law 0103 physical sciences Deposition (law) 010302 applied physics Chemistry business.industry Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Capacitor Transmission electron microscopy visual_art visual_art.visual_art_medium Optoelectronics 0210 nano-technology business Science technology and society |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:01B106 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | The electrical, structural, and chemical properties of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) fabricated on Sb-rich (2 × 5) and Sb-stabilized (1 × 3) surfaces by atomic layer deposition are characterized. A combination of the transmission electron microscopic, x-ray photoelectron spectroscopic, and atomic force microscopic observations shows that the Sb-rich surface, with its excessive Sb atoms and clusters, leads to island deposition of the dielectric materials and results in the high leakage current of the MOSCAPs. For the MOSCAPs fabricated on the Sb-stabilized (1 × 3) surface, a density of interface traps as low as 8.03 × 1011 cm−2 eV−1 near the valence band and 1.86 × 1012 cm−2 eV−1 at the midgap is obtained as estimated by the conductance method. |
| Databáze: | OpenAIRE |
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