Comparison and Analysis of Organic Field Effect Transistor Structures Using Silicon Dioxide and Aluminium Oxide As Dielectrics
| Autor: | Shikha Bathla, Anirudh Raghunath |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Organic field-effect transistor Silicon business.industry Computer science chemistry.chemical_element 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Pentacene Organic semiconductor chemistry.chemical_compound chemistry Logic gate 0103 physical sciences Optoelectronics Field-effect transistor 0210 nano-technology business Layer (electronics) |
| Zdroj: | 2021 International Conference on Computer Communication and Informatics (ICCCI). |
| DOI: | 10.1109/iccci50826.2021.9402557 |
| Popis: | Organic Field Effect Transistors (OFETs) are not a new technology in electronics, they have been around for quite some time and have their fair share of limitations as well. In this paper, there will be points on why OFETs can be the future by highlighting why they came into existence in the first place and what integral aspects make them different and also advantageous at the same time. In the later half of the paper some areas will be discussed where OFETs still lack and then finally implement an OFET structure having Au as the contacts, pentacene as the organic semiconductor layer, SiO2 as the dielectric and Si as the gate, then compare the transfer and drain characteristics of the said device with another device having the same composition except the dielectric layer and the gate material would be replaced by Al2O3 and Al respectively. Both the OFETs used in this paper are top-contact bottom gate OFETs where the channel length is 50 microns. |
| Databáze: | OpenAIRE |
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