Molecular beam epitaxial growth and structural properties of hetero-crystalline and heterovalent PbTe/CdTe/InSb structures
| Autor: | David J. Smith, Tyler T. McCarthy, Yong-Hang Zhang, Maxwell B. Lassise, Brian D. Tracy |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Diffraction Materials science business.industry General Physics and Astronomy Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Cadmium telluride photovoltaics Characterization (materials science) Transmission electron microscopy Topological insulator 0103 physical sciences Optoelectronics 0210 nano-technology business Surface reconstruction Molecular beam epitaxy |
| Zdroj: | Journal of Applied Physics. 126:045708 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | Rock-salt lead chalcogenides such as PbTe are of much current interest for the physics study of quantum materials as a topological insulator and practical applications for infrared photodetectors. Heterocrystalline (rock-salt on zincblende) and heterovalent PbTe/CdTe/InSb heterostructures are grown on (001) InSb substrates using a single-chamber molecular beam epitaxy system. Elemental Pb and Te sources are used to independently vary the flux conditions at the heterocrystalline interface in nearly lattice-matched PbTe/InSb and PbTe/CdTe heterostructures. A streaky (1 × 1) surface reconstruction is observed during the growth of thicker PbTe layers on both InSb and CdTe, signifying smooth layer-by-layer growth. The thickness required for smooth PbTe growth on nearly lattice-matched zincblende materials can be minimized with the proper choice of growth conditions, particularly at the heterocrystalline interface. Characterization with x-ray diffraction indicates good crystalline quality, and observations by transmission electron microscopy reveal sharp interfaces between the PbTe and CdTe films. |
| Databáze: | OpenAIRE |
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