Preparation of low dimensional structures by molecular beam epitaxy-regrowth on patterned AlGaAs buffer layers
| Autor: | Karl Eberl, M. Dilger, P. Grambow, M. Hohenstein, A. Lehmann, A. Kurtenbach, Klaus von Klitzing, D. Heitmann |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Scanning electron microscope Doping Analytical chemistry Condensed Matter Physics Buffer (optical fiber) Electronic Optical and Magnetic Materials Hall effect Transmission electron microscopy Materials Chemistry Electrical and Electronic Engineering Layer (electronics) Quantum well Molecular beam epitaxy |
| Zdroj: | Solid-State Electronics. 37:535-538 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(94)90240-2 |
| Popis: | We studied the preparation of low dimensional structures by molecular beam epitaxy (MBE)-regrowth on patterned AlGaAs buffer layers. The detailed interface and surface structure was investigated by scanning electron microscopy and transmission electron microscopy. The active area on the patterned Al0.33Ga0.67As buffer layer was passivated by a thin GaAs cap layer which is thermally desorbed in the MBE system prior to overgrowth. Small {111}A and larger {311}A facets dominate the surface structure after MBE-regrowth on the etched ridges along the [0 1 ] direction within the (100) surface plane. Hall effect measurements demonstrate, that an electron concentration of 8 × 1011 cm−2 is achieved in a 20 nm wide modulation doped quantum well with a regrown AlGaAs buffer layer thickness of only 65 nm. No free carriers are detected in the overgrown quantum well within the region where the etched Al0.33Ga0.67As surface was exposed to air. |
| Databáze: | OpenAIRE |
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