Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma
| Autor: | Kevin P. Martin, H. P. Gillis, D. A. Choutov, Robert F. Davis, Michael D. Bremser |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Plasma etching
Materials science business.industry Analytical chemistry Heterojunction Plasma Surface finish Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Root mean square Etching (microfabrication) Materials Chemistry Surface roughness Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 26:301-305 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-997-0168-7 |
| Popis: | Hetero-epitaxial films of GaN(OOOl), deposited on SiC(OOOl) by organometallic vapor phase epitaxy and masked by 200 nm of SiO2, have been patterned by low energy electron enhanced etching (LE4) in hydrogen and chlorine dc plasmas at room temperature. Lines 2.0 µm wide showed highly anisotropic etching: straight side walls, no overcut, no trenching, and no “pedestal” at the base of the line. Root mean square (RMS) surface roughness of the films as grown was 8.5–10A; after LE4, RMS surface roughness of the etched surfaces was 2.5A. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink