Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices

Autor:	W. Grieshaber, Robert F. Karlicek, I. D. Goepfert, Erdmann Frederick Schubert, M. J. Schurman, C. Tran
Rok vydání:	1996
Předmět:	Materials science Photoluminescence Band gap business.industry General Physics and Astronomy Laser law.invention law Peak intensity Optoelectronics Luminescence business Excitation Diode Light-emitting diode
Zdroj:	Journal of Applied Physics. 80:4615-4620
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.363443
Popis:	saturate at high excitation densities. These dependences are in excellent agreement with experimental results. The relevance of the results for optoelectronic GaN devices is discussed. It is shown that the peak intensity of the yellow luminescence line is negligibly small at typical injection currents of light-emitting diodes and lasers. © 1996 American Institute of Physics. @S0021-8979~96!01020-1#
Databáze:	OpenAIRE
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