| Autor: |
O A Pashko, A S Semenov, I V Voskoboĭnikova, A A Borodkin, N A Vagner, A V Smirnov, V I Borodulin, V N Morozov, I S Goldobin, V I Shveĭkin, V N Penkin, S N Grekova |
| Rok vydání: |
1986 |
| Předmět: |
|
| Zdroj: |
Soviet Journal of Quantum Electronics. 16:784-788 |
| ISSN: |
0049-1748 |
| Popis: |
Injection heterojunction lasers were made from AlGaAs solid solutions. Their resonators were 20–30μ long and they were formed by microcleaving of double heterostructure layers. The dependences of the threshold current on the resonator length and on the reflection coefficients of the mirrors were investigated. The watt-ampere and spectral characteristics of the laser radiation were determined. The threshold currents of lasers with additional reflecting coatings on the mirrors were 12–15 mA and the pump currents needed to achieve an output radiation power of 3 mW in one direction in the cw regime were 16–20 mA. A study was made of the characteristics of integrated laser-photodiode pairs. The dependences of the photocurrent on the laser radiation power were linear up to 10–15 mW. An investigation was made of the influence of temperature on the radiation power-photocurrent characteristics in the range 20-100°C. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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