Terahertz transport dynamics in the metal-insulator transition of V 2 O 3 thin film
| Autor: | Guobao Li, Huiqiao Wang, F. H. Su, Zhong Liuwen, Y. Y. Luo, S.S. Pan, J. M. Dai, Chengxu Zhang, Sichao Xu |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry Terahertz radiation 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Optical conductivity Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Terahertz spectroscopy and technology Optics Sputtering 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Physical and Theoretical Chemistry Thin film Metal–insulator transition 010306 general physics 0210 nano-technology Absorption (electromagnetic radiation) business Spectroscopy |
| Zdroj: | Optics Communications. 387:385-389 |
| ISSN: | 0030-4018 |
| DOI: | 10.1016/j.optcom.2016.10.061 |
| Popis: | The dynamic behavior of thermally-induced metal-insulator transition of V2O3 thin film on Si substrate grown by reactive magnetron sputtering was investigated by the terahertz time-domain spectroscopy. It was found that the THz absorption and optical conductivity of the thin films are temperature-dependent, and the THz amplitude modulation can reach as high as 74.7%. The complex THz optical conductivity in the metallic state of the V2O3 thin films can be well-fitted by the Drude-Smith model, which offer the insight into the electron transport dynamic during the metal-insulator transition of the thin film. |
| Databáze: | OpenAIRE |
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