Origin of the Concentration Quenching of Luminescence in Zn2SiO4:Mn Phosphors
Autor: | T. A. Onufrieva, I. D. Popov, M. V. Rotermel, I. V. Ivanova, N. A. Zaitseva, Rina F. Samigullina, Inna V. Baklanova, T. I. Krasnenko |
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Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Materials science Quenching (fluorescence) Solid-state physics Dopant Analytical chemistry Phosphor Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Ion chemistry.chemical_compound chemistry 0103 physical sciences Luminophore 010306 general physics Luminescence Excitation |
Zdroj: | Physics of the Solid State. 61:806-810 |
ISSN: | 1090-6460 1063-7834 |
Popis: | The analysis of the unified series of single-phase Zn2 – 2xMn2xSiO4 samples (x ≤ 0.2) has provided the possibility to determine the optimal dopant concentration x = 0.13 for the maximum luminescence intensity. It has been established that the dominating mechanism of concentration luminescence quenching and excitation energy dissipation is the oxidation of some Mn2+ activating ions and the growth of defectness in the luminophore due to this process Phosphors. |
Databáze: | OpenAIRE |
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