Effect of the formation conditions on the properties of ZnO:Ga thin films deposited by magnetron-assisted sputtering onto a cold substrate
| Autor: | Dmitry G. Gromov, A. M. Koz’min, S. V. Shamanaev, D. N. Bogolyubova, A. S. Shulyat’ev, S. A. Polomoshnov |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Argon Hydrogen Analytical chemistry chemistry.chemical_element Substrate (electronics) engineering.material Sputter deposition Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry Coating Chemical engineering Sputtering Cavity magnetron engineering Thin film |
| Zdroj: | Semiconductors. 47:1687-1691 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782613130083 |
| Popis: | The results of studying ZnO:Ga thin films produced by magnetron-assisted sputtering of the corresponding target in argon and in argon with a 5% hydrogen content without heating of the substrate are reported. It is shown that the resistivity and temporal stability of the ZnO:Ga films substantially depend on their thickness, exposure to solar radiation, and influence of the environment. It is found that doping the ZnO:Ga thin films with hydrogen provides a means for greatly decreasing their resistivity, whereas the degree of temporal stability of the films can be improved using a coating protecting them from the influence of the gas environment. |
| Databáze: | OpenAIRE |
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