Electron spin resonance of interacting spins in n-Ge. 1. The spectrum and g factor

Autor: S. I. Goloshchapov, T. V. Tisnek, A. G. Zabrodskiĭ, A. I. Veĭnger
Rok vydání: 2007
Předmět:
Zdroj: Semiconductors. 41:790-798
ISSN: 1090-6479
1063-7826
DOI: 10.1134/s1063782607070044
Popis: The changes in the spectrum and g factor of electron spin resonance due to the interaction of spins in the insulator state of n-Ge near the insulator-metal phase transition are studied. It is found that, in this region, the g factor decreases as the doping level is increased and exhibits anisotropy in the immediate vicinity of the transition. The effects of compensation and induced antiferromagnetic ordering on the g factor are analyzed. It is shown that, as the transition point is approached, the high-temperature limit of observation of the electron spin resonance rises sharply.
Databáze: OpenAIRE