Analysis on high-frequency characteristics of SOI lateral BJTs with self-aligned external base for 2-GHz RF applications
| Autor: | Sadayuki Yoshitomi, Tomoaki Shino, Tsuneaki Fuse, Shigeru Kawanaka, Makoto Yoshimi, T. Yamada, H. Nii, J. Matsunaga, Yasuhiro Katsumata, Shigeyoshi Watanabe, K. Inoh |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Fabrication business.industry Bipolar junction transistor Base (geometry) Electrical engineering Silicon on insulator Cutoff frequency Electronic Optical and Magnetic Materials Length measurement Optoelectronics Radio frequency Electrical and Electronic Engineering business Common emitter |
| Zdroj: | IEEE Transactions on Electron Devices. 49:414-421 |
| ISSN: | 0018-9383 |
| Popis: | High-frequency characteristics of SOI lateral BJTs designed for 2-GHz radio frequency (RF) applications are measured and compared for various link-base length, emitter width, and collector structure. Based on experimental data and device simulation, degradation mechanism of cutoff frequency for shorter link-base is analyzed. By suppressing external base-induced effects, peak cutoff frequency is increased from 10 GHz to 15 GHz. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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