Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)m(GaAs)n strained short-period superlattices and InGaAs alloy layers grown on GaAs

Autor:	Yasufumi Takagi, K. Samonji, Hiroo Yonezu, Naoki Ohshima
Rok vydání:	1999
Předmět:	Diffraction Surface diffusion Materials science Condensed matter physics Superlattice Alloy General Physics and Astronomy engineering.material Gallium arsenide chemistry.chemical_compound Crystallography chemistry Transmission electron microscopy X-ray crystallography Surface roughness engineering
Zdroj:	Journal of Applied Physics. 86:1331-1339
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.370891
Popis:	We investigated the formation process of cross-hatch patterns (CHPs) and the lattice relaxation process in the growth of an (InAs)1(GaAs)4 strained short-period superlattice (SSPS) and an In0.2Ga0.8As alloy layer on GaAs(100) substrates. By using x-ray diffraction and cross-sectional transmission electron microscopy, it was found that the lattice relaxation in the (InAs)1(GaAs)4SSPS proceeded as fast as that in the In0.2Ga0.8As alloy layer. The surfaces of the grown layers showed CHPs, and the surface roughness increased by means of the evolution of the CHPs. The surface roughness of the SSPSs was larger than that of the alloy layers, whereas no apparent difference was observed in the lattice relaxation process between the SSPSs and the alloy layers. Additionally, the height of surface ridges parallel to the [011] direction was higher than that parallel to the [011] direction. We observed the distribution of highly strained InAs and GaAs islands on the surfaces of strained InGaAs layers by using an atomi...
Databáze:	OpenAIRE
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