The concentration of mobile ions in insulating oxide films during growth
| Autor: | A. Moehring, M. Pilaski, M. M. Lohrengel |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
General Chemical Engineering General Engineering Analytical chemistry Oxide General Physics and Astronomy Charge density Electrochemistry Energy storage Ion Anode Condensed Matter::Materials Science chemistry.chemical_compound Chemical engineering chemistry General Materials Science High field Free parameter |
| Zdroj: | Ionics. 5:23-30 |
| ISSN: | 1862-0760 0947-7047 |
| Popis: | The high field model had to be modified for the anodic growth of amorphous oxide films (Al, Nb, and Ta). Mobile ions are only formed at the interfaces and migrate through the film. Simulations based on this assumption show a very similar shape of current-potential curves compared to the experimental results. The simulations use only one free parameter, the charge density p. All other parameters, such as i0 and β, were taken from the experiments. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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