Physics of high j/sub c/ Nb/AlO/sub x//Nb Josephson junctions and prospects of their applications
| Autor: | Dmitri V. Averin, Konstantin K. Likharev, Y. Naveh |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Josephson effect
Physics Condensed matter physics Niobium chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Rapid single flux quantum Critical current Electrical and Electronic Engineering Superconducting integrated circuits Quantum tunnelling Electronic circuit |
| Zdroj: | IEEE Transactions on Appiled Superconductivity. 11:1056-1060 |
| ISSN: | 1051-8223 |
| DOI: | 10.1109/77.919529 |
| Popis: | At critical current density of the order of 100 kA/cm/sup 2/, tunnel Josephson junctions become overdamped and may be used in RSFQ circuits without external shunting, dramatically increasing circuit density. However, the physics of electron transport in such high-j/sub c/ junctions differs from the usual direct tunneling and until recently remained unclear. We have found that the observed dc I-V curves of niobium-trilayer junctions with j/sub c/=210 kA/cm/sup 2/ can be explained quantitatively by resonant tunneling through strongly disordered barriers. According to this interpretation, random spread of critical current in high-j/sub c/ junctions may be rather small (below 1% r.m.s.) even in deep-submicron junctions, making VLSI RSFQ circuits, with density above 10 MJJ/cm/sup 2/, feasible. |
| Databáze: | OpenAIRE |
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