Enhancement of Luminescence Properties of InGaAs/GaAs Quantum Dots by Control of AsH3 Overpressure during Growth Interruption

Autor:	D. G. Ko, Weon Guk Jeong
Rok vydání:	2008
Předmět:	Materials science Band gap Quantum dot Ellipsometry business.industry Ingaas gaas General Physics and Astronomy Optoelectronics Metalorganic vapour phase epitaxy Luminescence business Electronic band structure Overpressure
Zdroj:	Journal of the Korean Physical Society. 52:84-87
ISSN:	0374-4884
DOI:	10.3938/jkps.52.84
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1411d795db3a0dbe824b89d698f1bb4c https://doi.org/10.3938/jkps.52.84 Zobrazit plný text záznamu