Effect of the irradiation intensity on the efficiency of the production radiation defects in n-and p-type Si crystals

Autor:	T. A. Pagava, Z. V. Basheleishvili
Rok vydání:	1999
Předmět:	Materials science Electron flux Electric field Moment (physics) Charge (physics) Irradiation Atomic physics Radiation Condensed Matter Physics Atomic and Molecular Physics and Optics Intensity (heat transfer) Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 33:508-509
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1187900
Popis:	The effect of the electron flux density ψ on the efficiency η of the production of radiation defects in n-and p-type Si samples is investigated. It is shown that the application of an electric field to the sample during irradiation affects ψ(η) only in n-type Si crystals. This is explained by the charge state of Frenkel pairs at the moment of formation at low irradiation energies.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::13ef40e3ded8bc3bcdbbd3b36d6d869e https://doi.org/10.1134/1.1187900 Zobrazit plný text záznamu Plný text ve formátu PDF