Sputtered full-wafer backside metallization for n-type InP: effect of temperature annealing
| Autor: | R. Kuchibhatla, E. M. Griswold, S. R. Das, A. Shen, St.J. Dixon-Warren, F. Zheng, S. Zhang |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Fabrication Annealing (metallurgy) business.industry Contact resistance Metals and Alloys Surfaces and Interfaces Titanium nitride Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Sputtering Materials Chemistry Grain boundary diffusion coefficient Optoelectronics Wafer business Ohmic contact |
| Zdroj: | Thin Solid Films. 472:76-83 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2004.06.112 |
| Popis: | A full-wafer backside n-ohmic metallization scheme for InP is reported. The contact is formed by a single-step, all-sputter process and has been used successfully in three-inch InP opto-electronic device manufacturing. The metallization is based on the combination of a nickel–germanium–gold ohmic contact followed by a titanium–titanium nitride–titanium–gold metal stack. The titanium nitride layer acts as a barrier to grain boundary diffusion of indium and other material from the substrate to the surface of the top gold layer. The top gold is required for a gold–tin solder die bond process. The sputter process provides better than 5% cross-wafer and wafer-to-wafer thickness uniformity and a contact resistance of 2.5–8.3×10 −5 Ω cm 2 . We report the fabrication process for this metal contact and the results of a full physical characterization by transmission electron microscopy, Auger survey and depth profile analysis and X-ray analysis. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect