Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages
| Autor: | Chao Wen, Mario Lanza, Fei Hui, Xu Jing, Ana M. Aguilera, Yuanyuan Shi, Juan Bautista Roldán, Christian Acal, Marco A. Villena, D. Maldonado, Jing Kong, Francisco Jiménez-Molinos, Juan Eloy Ruiz-Castro |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Dielectric strength Quantum point contact 02 engineering and technology Memristor 021001 nanoscience & nanotechnology Thermal conduction 01 natural sciences law.invention Reliability (semiconductor) law 0103 physical sciences Phase-type distribution 0210 nano-technology Voltage Weibull distribution |
| Zdroj: | IRPS |
| DOI: | 10.1109/irps45951.2020.9129147 |
| Popis: | Memristor devices with the Au/Ag/h-BN/Fe structure have been fabricated and characterized. The switching voltages, and other newly-defined parameters extracted, like V 2dmax1 and V 2dmax2 , have been analyzed statistically in an exhaustive manner. The conduction across the memristor can be described well with a Quantum Point Contact (QPC) model that accounts for quantized filamentary conduction. The distributions of set and reset voltages have been proved to be accurately reproduced by using Weibull distributions. We also present an analysis making use of phase-type distributions to characterize the measured data stochasticity. |
| Databáze: | OpenAIRE |
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