Bipolar resistive switching memory using bilayer TaOx/WOx films
| Autor: | T. C. Tien, Wei-Su Chen, H. Y. Lee, M.-J. Kao, Amit Prakash, Ming-Jinn Tsai, Frederick T. Chen, Chao-Sung Lai, Siddheswar Maikap |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Cumulative distribution function Bilayer Electrical engineering Condensed Matter Physics Electronic Optical and Magnetic Materials Non-volatile memory Transmission electron microscopy Materials Chemistry Optoelectronics Electrical measurements Electrical and Electronic Engineering business Spectroscopy Reset (computing) Voltage |
| Zdroj: | Solid-State Electronics. 77:35-40 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2012.05.028 |
| Popis: | Resistive switching properties of a memory device in an IrO x /TaO x /WO x /W structure have been investigated. High-resolution transmission electron microscopy image has shown the formation of a bilayer structure of TaO x /WO x which is further confirmed by energy dispersive X-ray spectroscopy and X-ray photo-electron spectroscopy analyses. The underlying switching mechanism is successfully explained by providing various electrical measurements such as device area dependency on set/reset voltage and low resistance state. A model based on oxygen ions migration is then proposed. Cumulative probability plots of essential memory parameters such as set/reset voltage and LRS/HRS show good distribution. The device has shown excellent read endurance of >10 5 times and data retention of >10 4 s with a resistance ratio of >10 2 at 85 °C. |
| Databáze: | OpenAIRE |
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