The damage induced on the (111) silicon surface by low energy helium ions investigated by ion scattering spectroscopy (ISS)

Autor:	P. Gloesener, J.-L. Bezy, Patrick Bertrand
Rok vydání:	1983
Předmět:	Low energy Low-energy ion scattering Silicon chemistry Annealing (metallurgy) Helium ions Scattering General Engineering Analytical chemistry chemistry.chemical_element Spectroscopy Ion
Zdroj:	Nuclear Instruments and Methods in Physics Research. :371-373
ISSN:	0167-5087
DOI:	10.1016/0167-5087(83)90825-6
Popis:	Low energy ion scattering spectroscopy (ISS) is used to investigate the damage creation on a (111) surface bombarded by low energy helium ions. The influence of the total ion dose on the relative contribution of single and multiple scattering is investigated at different temperatures. It is concluded that under ion bombardment (~10 /sup -5/ A/cm/sup 2/) a saturation in the amount of damage is directly obtained at room temperature, at 1000K annealing occurs and at 750K the damage creation is observable.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::103e7840cf4e3dcd9bf1d1228c7687ba https://doi.org/10.1016/0167-5087(83)90825-6 Zobrazit plný text záznamu