Electronic mobility limited by optical phonons in symmetric MgxZn1-xO/ZnO quantum wells with mixed phases
| Autor: | S. L. Ban, Y.H. Zan |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Force balance equation Materials science Condensed matter physics Phonon Transistor Continuum (design consultancy) 02 engineering and technology Electron Dielectric Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention law Phase (matter) 0103 physical sciences General Materials Science Electrical and Electronic Engineering 0210 nano-technology Quantum well |
| Zdroj: | Superlattices and Microstructures. 150:106782 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2020.106782 |
| Popis: | In symmetric MgxZn1-xO/ZnO quantum wells (QWs), which are the basic structures of high electronic mobility transistors (HEMTs), the electron states and optical phonon modes are clarified with the dielectric continuum model, uniaxial model, and force balance equation. Then, the electronic mobility affected by optical phonons is obtained around room temperature by a weight model combined with Lei-Ting's force-balance equation, in consideration of mixed phases in MgxZn1-xO (0.37 0.62) Mg composition regions, respectively. In WZ phase, the mobility first reaches a minimum due to the strong polarizations, then rises to a maximum in RS phase. It indicates that the restriction of electronic mobility from different phases should be a primary consideration for the designation of HEMTs. Strong temperature and size dependences of the mobility are also revealed as well. Relatively thicker well width of QWs is more beneficial to increase electronic mobility. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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