Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

Autor:	N. I. Borgardt, A. V. Tsikunov, Michael Seibt, M. V. Lovygin, I. P. Kazakov
Rok vydání:	2015
Předmět:	Crystal Crystallography Materials science Atomic layer epitaxy Crystal growth Substrate (electronics) Condensed Matter Physics Epitaxy High-resolution transmission electron microscopy Layer (electronics) Atomic and Molecular Physics and Optics Vicinal Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 49:1714-1717
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782615130102
Popis:	The results of electron-microscopy studies of a thin epitaxial aluminum layer deposited onto a misoriented gallium-arsenide substrate are reported. It is established that the layer consists of differently oriented grains, whose crystal lattices are coherently conjugated with the substrate with the formation of misfit dislocations, as in the case of a layer on a singular substrate. Atomic steps on the substrate surface are visualized, and their influence on the growth of aluminum crystal grains is discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0fb6b46fe2b9474185755a79ab7b2d86 https://doi.org/10.1134/s1063782615130102 Zobrazit plný text záznamu Plný text ve formátu PDF